Lateral fin static induction transistor
AssigneeHRL Laboratories, LLC
InventorBiqin Huang
Life of this patent
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Abstract
Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby defining a gated channel within the semi conductive channel, the semi conductive channel further including a drift region electrically coupling the gated channel to the drain region of the transistor.
Claims15
A transistor comprising:
- a source region,
- a drain region, and
- a buffer layer, the source and drain regions being next to and on the buffer layer;
- a semi conductive channel formed between the source and drain regions, a portion of the semi conductive channel comprising a fin;
- a gate structure covering at least a portion of the fin, wherein:
- the source and drain regions comprise a semiconductor material doped at a first concentration;
- the buffer layer comprises a semiconductor material doped at a second concentration that is less than the first concentration;
- the semi conductive channel comprises a semiconductor material doped at a third concentration wherein the third concentration is different than the first and second concentrations.
Dependencies are inferred from the claim text.