SiC static induction transistor with double side cooling and method of manufacture

A silicon carbide (SiC) static induction transistor (SIT) device, comprising:

• a first heatsink;
• and
• a die disposed under the first heatsink and including:
• a source disposed under a top surface of the transistor device;
• a recessed gate disposed over the source and configured to receive a control signal;
• a drain disposed over the recessed gate and configured to generate an output signal;
• an epitaxial pattern disposed between the source and the drain and including a protruding portion;
• and
• a gate bus electrically coupled to the gate and including carbon.

A method of forming a silicon carbide (SiC) static induction transistor (SIT) device, comprising:

• providing a substrate including a source that is doped with dopants of a first conductivity type;
• forming an epitaxial pattern including a protruding portion over the source;
• forming a recessed gate over the source;
• forming a gate bus over the recessed gate;
• forming a drain over the gate bus and the epitaxial pattern;
• and
• forming a first heatsink over the drain.