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US 2023/0290888 A1Published application
Semiconductor element and semiconductor device
AssigneeFlosfia Inc.
InventorsHideaki YANAGIDA, Shogo MIZUMOTO, Hiroyuki ANDO, Yusuke MATSUBARA
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Abstract
Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.
Claims13
A semiconductor element comprising at least:
- a semiconductor layer including a crystalline oxide semiconductor as a major component;
- an electrode layer laminated on the semiconductor layer;
- and
- a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.
1 more element
Dependencies are inferred from the claim text.