Lateral fin static induction transistor
AssigneeHRL Laboratories, LLC
InventorBiqin Huang
Life of this patent
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Abstract
Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby defining a gated channel within the semi conductive channel, the semi conductive channel further including a drift region electrically coupling the gated channel to the drain region of the transistor.
Claims5
A transistor comprising:
- source and drain regions disposed on a substrate;
- a fin disposed between the source and drain regions;
- a the fin being at least partially covered by a conductive structure and a dielectric layer, the dielectric layer electrically insulating the conductive structure from the fin;
- wherein
- the source and drain regions comprise diamond doped with a P-type dopant, and
- the fin comprises diamond doped with a P-type dopant, wherein the P-type dopant concentration of the fin is less than the P-type dopant concentration of the source and drain regions.
Dependencies are inferred from the claim text.