H10D 30/40
Fets having zero-dimensional [0d], one-dimensional [1d] or two-dimensional [2d] charge carrier gas
Official title: FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
H10D30/40 (Fets having zero-dimensional [0d], one-dimensional [1d] or two-dimensional [2d] charge carrier gas) appears on 10,508 US grants and 15,440 published applications in this corpus.
Search patents in H10D- Granted patents
- 10,508
- Published applications
- 15,440
- Assignees
- 1,320
- Inventors
- 13,135
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 17 | 0 |
| 1988 | 20 | 0 |
| 1989 | 32 | 0 |
| 1990 | 14 | 0 |
| 1991 | 31 | 0 |
| 1992 | 27 | 0 |
| 1993 | 27 | 0 |
| 1994 | 43 | 0 |
| 1995 | 36 | 0 |
| 1996 | 27 | 0 |
| 1997 | 38 | 0 |
| 1998 | 42 | 0 |
| 1999 | 38 | 0 |
| 2000 | 35 | 0 |
| 2001 | 39 | 22 |
| 2002 | 47 | 51 |
| 2003 | 47 | 56 |
| 2004 | 46 | 87 |
| 2005 | 53 | 114 |
| 2006 | 66 | 171 |
| 2007 | 76 | 166 |
| 2008 | 88 | 201 |
| 2009 | 127 | 222 |
| 2010 | 168 | 268 |
| 2011 | 204 | 369 |
| 2012 | 253 | 414 |
| 2013 | 387 | 569 |
| 2014 | 540 | 729 |
| 2015 | 676 | 728 |
| 2016 | 703 | 697 |
| 2017 | 711 | 778 |
| 2018 | 657 | 711 |
| 2019 | 736 | 758 |
| 2020 | 724 | 789 |
| 2021 | 564 | 651 |
| 2022 | 511 | 777 |
| 2023 | 488 | 1006 |
| 2024 | 613 | 1659 |
| 2025 | 738 | 2095 |
| 2026 | 797 | 1352 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Circuit for transporting charged particles6 Oct 2026US 12,757,425 B2Qdevil Aps
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Conductive bridge through dielectric wall between source or drain contacts6 Oct 2026US 12,757,439 B2Intel Corporation
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- Method for forming semiconductor device structure with protection layer8 Oct 2026US 2026/0313937 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015