H10D 30/43
Having one-dimensional [1d] charge carrier gas channels
Official title: having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
H10D30/43 (Having one-dimensional [1d] charge carrier gas channels) appears on 2,864 US grants and 5,701 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,864
- Published applications
- 5,701
- Assignees
- 360
- Inventors
- 5,004
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 7 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 1 |
| 2003 | 2 | 6 |
| 2004 | 4 | 6 |
| 2005 | 4 | 7 |
| 2006 | 4 | 11 |
| 2007 | 3 | 9 |
| 2008 | 7 | 16 |
| 2009 | 10 | 20 |
| 2010 | 14 | 32 |
| 2011 | 20 | 67 |
| 2012 | 45 | 51 |
| 2013 | 72 | 89 |
| 2014 | 102 | 146 |
| 2015 | 123 | 163 |
| 2016 | 174 | 183 |
| 2017 | 197 | 208 |
| 2018 | 204 | 262 |
| 2019 | 261 | 241 |
| 2020 | 229 | 220 |
| 2021 | 184 | 148 |
| 2022 | 128 | 156 |
| 2023 | 123 | 352 |
| 2024 | 140 | 945 |
| 2025 | 258 | 1476 |
| 2026 | 502 | 886 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Method for forming semiconductor device structure with protection layer8 Oct 2026US 2026/0313937 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same8 Oct 2026US 2026/0313940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same8 Oct 2026US 2026/0313941 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016