H10D 30/435
Having multiple laterally adjacent 1d material channels
Official title: {having multiple laterally adjacent 1D material channels}
H10D30/435 (Having multiple laterally adjacent 1d material channels) appears on 128 US grants and 145 published applications in this corpus.
Search patents in H10D- Granted patents
- 128
- Published applications
- 145
- Assignees
- 46
- Inventors
- 250
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 4 |
| 2010 | 1 | 4 |
| 2011 | 2 | 5 |
| 2012 | 4 | 1 |
| 2013 | 12 | 15 |
| 2014 | 12 | 14 |
| 2015 | 7 | 9 |
| 2016 | 14 | 15 |
| 2017 | 14 | 18 |
| 2018 | 9 | 8 |
| 2019 | 12 | 6 |
| 2020 | 7 | 5 |
| 2021 | 5 | 3 |
| 2022 | 2 | 7 |
| 2023 | 4 | 10 |
| 2024 | 6 | 12 |
| 2025 | 9 | 4 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Integrated circuit structures with deep via structure21 May 2026US 2026/0143748 A1Intel Corporation
- Semiconductor devices7 May 2026US 2026/0129863 A1Samsung Electronics Co., Ltd.
- Vertical nanosheet transistor with backside source/drain contact8 Jan 2026US 2026/0013179 A1International Business Machines Corporation
- Semiconductor structure27 Nov 2025US 2025/0366098 A1National Cheng Kung University
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Most cited
By later US patents
- Maskless process for suspending and thinning nanowires40US 7,884,004 B2International Business Machines Corporation · 2011
- Nanowire FET and finFET37US 8,536,029 B1International Business Machines Corporation · 2013
- Isolated Germanium nanowire on Silicon fin36US 7,851,790 B2Intel Corporation · 2010
- Gate-all-around nanowire field effect transistors32US 8,384,065 B2International Business Machines Corporation · 2013
- Gate-all-around nanowire tunnel field effect transistors31US 8,173,993 B2International Business Machines Corporation · 2012