Back to results
US 12,707,685 B2Granted
Segmented transistor active region for enhanced thermal conductivity
AssigneeRaytheon Technologies Corporation
InventorCaroline Reilly
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided and includes a miscut substrate, intermediate layers epitaxially grown on the miscut substrate such that an uppermost surface of the intermediate layers includes surface steps, segmented active regions including nanowire channels, each of which is epitaxially grown on a corresponding one of the surface steps and a cap layer epitaxially grown on the nanowire channels and exposed portions of the uppermost surface.
Claims13
A semiconductor device, comprising:
- a miscut substrate having a lowermost substrate surface defining a first horizontal plane and an upper substrate surface extending horizontally along a second horizontal plane, which is parallel with the first horizontal plane, with horizontally aligned miscut sections, each one of the horizontally aligned miscut sections being angled with respect to the horizontal plane;
- intermediate layers epitaxially grown on the miscut substrate such that an uppermost surface of the intermediate layers, which extends horizontally along a third horizontal plane that is parallel with the first and second horizontal planes, and which comprises horizontally aligned surface steps, each one of the horizontally aligned surface steps being respectively associated with a corresponding one of the horizontally aligned miscut sections;
- segmented active regions comprising nanowire channels, each of which is epitaxially grown on a corresponding one of the surface steps;
- and
- a cap layer epitaxially grown on the nanowire channels and exposed portions of the uppermost surface.
2 more elements
A method of building a semiconductor device, the method comprising:
- providing a miscut substrate having a lowermost substrate surface defining a first horizontal plane and an upper substrate surface extending horizontally along a second horizontal plane, which is parallel with the first horizontal plane, with horizontally aligned miscut sections, each one of the horizontally aligned miscut sections being angled with respect to the horizontal plane;
- epitaxially growing intermediate layers on the miscut substrate such that an uppermost surface of the intermediate layers, which extends horizontally along a third horizontal plane that is parallel with the first and second horizontal planes, and which comprises horizontally aligned surface steps, growth of each one of the horizontally aligned surface steps being respectively caused by a corresponding one of the horizontally aligned miscut sections;
- epitaxially growing nanowire channels, with each nanowire channel being epitaxially grown on a corresponding one of the surface steps to form segmented active regions;
- and
- epitaxially growing a cap layer on the nanowire channels and exposed portions of the uppermost surface.
2 more elements
Dependencies are inferred from the claim text.