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US 12,484,250 B2Granted
Horizontally stacked nanosheet gate all around device structure
AssigneeInternational Business Machines Corporation
InventorsShogo Mochizuki, Kangguo Cheng, Juntao Li
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Abstract
A semiconductor structure includes a substrate disposed in a horizontal plane, a gate metal on the substrate, a first spacer and a second spacer on the substrate with the gate metal between the first spacer and the second spacer, and a plurality of horizontally stacked nanosheets extending between the first spacer and the second spacer, with the gate metal encapsulating the plurality of horizontally stacked nanosheets between the first spacer and the second spacer.
Claims18
A semiconductor structure comprising:
- a substrate disposed in a horizontal plane;
- a gate metal over the substrate;
- and
- a plurality of horizontally stacked nanosheets encapsulated by the gate metal,
- wherein the plurality of horizontally stacked nanosheets have a major channel plane different than that of the substrate.
2 more elements
A semiconductor structure comprising:
- a substrate disposed in a horizontal plane;
- a gate metal on the substrate;
- a first spacer and a second spacer on the substrate with the gate metal between the first spacer and the second spacer;
- and
- a plurality of vertically oriented, horizontally stacked, nanosheets extending between the first spacer and the second spacer, with the gate metal encapsulating the plurality of vertically oriented, horizontally stacked, nanosheets between the first spacer and the second spacer.
2 more elements
Dependencies are inferred from the claim text.