Integrated circuit structures with deep via structure

An integrated circuit structure, comprising:

• a fin;
• a gate structure over the fin;
• an epitaxial source or drain structure at an end of the fin;
• a conductive trench contact structure vertically over the epitaxial source or drain structure;
• and
• a conductive via vertically beneath and extending into the conductive trench contact structure such that the conductive trench contact is along a portion of a sidewall of the conductive via, the conductive via having a first width beneath the epitaxial source or drain structure greater than a second width laterally adjacent to the epitaxial source or drain structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of horizontally stacked nanowires;
• a gate structure over the plurality of horizontally stacked nanowires;
• an epitaxial source or drain structure at an end of the plurality of horizontally stacked nanowires;
• a conductive trench contact structure vertically over the epitaxial source or drain structure;
• and
• a conductive via vertically beneath and extending into the conductive trench contact structure such that the conductive trench contact is along a portion of a sidewall of the conductive via, the conductive via having a first width beneath the epitaxial source or drain structure greater than a second width, the second width laterally adjacent to the epitaxial source or drain structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a fin;
• a gate structure over the fin;
• an epitaxial source or drain structure at an end of the fin;
• a conductive trench contact structure vertically over the epitaxial source or drain structure;
• and
• a conductive via vertically beneath and extending into the conductive trench contact structure such that the conductive trench contact is along a portion of a sidewall of the conductive via, the conductive via having a first width beneath the epitaxial source or drain structure greater than a second width laterally adjacent to the epitaxial source or drain structure.