Semiconductor device

A semiconductor device comprising:

• a first backside interlayer insulating film;
• a backside wiring line in the first backside interlayer insulating film, the backside wiring line including a first surface and a second surface opposite each other in a first direction;
• a fin-type pattern on the first surface of the backside wiring line, the fin-type pattern extending in a second direction;
• a second backside interlayer insulating film between the fin-type pattern and the first backside interlayer insulating film;
• a gate electrode on the fin-type pattern and extending in a third direction;
• a source/drain pattern on a first side surface of the gate electrode and on the fin-type pattern;
• a backside source/drain contact in the second backside interlayer insulating film and the fin-type pattern, the backside source/drain contact connecting the backside wiring line and the source/drain pattern;
• and
• a contact silicide film between the backside source/drain contact and the source/drain pattern, wherein
• the backside source/drain contact includes an upper pattern and a lower pattern,
• the upper pattern is in contact with the fin-type pattern and the contact silicide film,
• the lower pattern is in contact with the second backside interlayer insulating film,
• the upper pattern of the backside source/drain contact has a single conductive film structure made of metal, and
• an interface between the upper pattern of the backside source/drain contact and the lower pattern of the backside source/drain contact faces the backside wiring line and has either a convex shape or an inclined shape facing the backside wiring line.

A semiconductor device comprising:

• a first backside interlayer insulating film;
• a backside wiring line in the first backside interlayer insulating film, the backside wiring line including a first surface and a second surface opposite each other in a first direction;
• a fin-type pattern on the first surface of the backside wiring line, the fin-type pattern extending in a second direction;
• a second backside interlayer insulating film between the fin-type pattern and the first backside interlayer insulating film, the fin-type type pattern and the second backside interlayer insulating film defining a backside contact hole, the backside contact hole including a first backside contact hole and a second backside contact hole in fluid communication with each other, the first backside contact hole being in the fin-type pattern on a bottom of the second backside contact hole, and the second backside contact hole being in the second backside interlayer insulating film;
• a plurality of sheet patterns on the fin-type pattern and spaced apart from the fin-type pattern in the first direction;
• a gate electrode on the fin-type pattern, the gate electrode extending in a third direction and surrounding the plurality of sheet patterns;
• a source/drain pattern on a side surface of the gate electrode and on the fin-type pattern;
• a backside source/drain contact on the first surface of the backside wiring line, the backside source/drain contact connecting the backside wiring line and the source/drain pattern;
• and
• a contact silicide film between the backside source/drain contact and the source/drain pattern, wherein
• the backside source/drain contact includes an upper pattern and a lower pattern,
• the upper pattern of the backside source/drain contact is in contact with the fin-type pattern and the contact silicide film,
• the lower pattern of the backside source/drain contact is in contact with the second backside interlayer insulating film,
• the upper pattern of the backside source/drain contact has a single conductive film structure made of metal,
• the lower pattern of the backside source/drain contact includes a backside contact liner and a backside contact plug,
• the backside contact liner and the backside contact plug include a metal,
• the backside contact liner is in contact with the upper pattern of the backside source/drain contact and the second backside interlayer insulating film,
• the backside contact line defines a backside liner recess, and
• the backside contact plug fills the backside liner recess.