Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Chun Lin, Wen-Chiang Hong, Chih-Hao Chang
Life of this patent
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Abstract
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a first source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a first contact structure formed over a first side of the first S/D structure, and a portion of the first contact structure is lower than a top surface of the first S/D structure. The semiconductor structure includes a second contact structure formed over a second side of the first S/D structure, and the second contact structure is in direct contact with the first contact structure.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a first fin structure protruding from a front side of a substrate, wherein the first fin structure comprises first semiconductor material layers and second semiconductor material layers alternately stacked;
- forming an isolation structure surrounding the first fin structure;
- removing a portion of the first fin structure to form a S/D recess;
- forming an S/D structure in the S/D recess;
- forming a first contact structure over a first side of the S/D structure, wherein the first contact structure has an extending portion, and the extending portion has a bottom surface lower than a top surface of the S/D structure;
- and
- forming a second contact structure over a second side of the S/D structure after forming the first contact structure, wherein the second contact structure interfaces with the first contact structure.
A method for forming a semiconductor structure, comprising:
- forming a first fin structure protruding from a front side of a substrate, wherein the first fin structure comprises first semiconductor material layers and second semiconductor material layers alternately stacked;
- forming an isolation structure surrounding the first fin structure;
- forming a dummy gate structure on the first fin structure;
- forming a gate spacer layer adjacent to the dummy gate structure;
- forming a fin spacer adjacent to the first fin structure;
- removing a portion of the first fin structure to form a S/D recess;
- forming an S/D structure in the S/D recess;
- forming a first contact structure over a first side of the S/D structure, wherein a bottom surface of the first contact structure is lower than a top surface of the fin spacer;
- removing a portion of the substrate from a backside of the substrate;
- forming a dielectric layer below the substrate;
- forming a trench through the dielectric layer and the isolation structure;
- and
- forming a second contact structure in the trench, wherein the second contact structure is through the isolation structure.
A method for forming a semiconductor structure, comprising:
- forming a first fin structure and a second fin structure protruding from a front side of a substrate, wherein the first fin structure and the second fin structure, respectively, comprise first semiconductor material layers and second semiconductor material layers alternately stacked;
- removing a portion of the first fin structure to form a first S/D recess;
- removing a portion of the second fin structure to form a second S/D recess;
- forming a first S/D structure in the first S/D recess;
- forming a second S/D structure in the second S/D recess;
- forming a first contact structure over a frontside of the first S/D structure and a frontside of the second S/D structure, wherein the first contact structure has a T-shaped structure;
- and
- forming a second contact structure connecting a backside of the first S/D structure and a backside of the second S/D structure.
Dependencies are inferred from the claim text.