H10D 30/47
Having two-dimensional [2d] charge carrier gas channels
Official title: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D30/47 (Having two-dimensional [2d] charge carrier gas channels) appears on 7,554 US grants and 9,710 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,554
- Published applications
- 9,710
- Assignees
- 1,103
- Inventors
- 8,678
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 6 | 0 |
| 1986 | 6 | 0 |
| 1987 | 16 | 0 |
| 1988 | 18 | 0 |
| 1989 | 30 | 0 |
| 1990 | 13 | 0 |
| 1991 | 22 | 0 |
| 1992 | 21 | 0 |
| 1993 | 23 | 0 |
| 1994 | 33 | 0 |
| 1995 | 31 | 0 |
| 1996 | 20 | 0 |
| 1997 | 28 | 0 |
| 1998 | 30 | 0 |
| 1999 | 30 | 0 |
| 2000 | 26 | 0 |
| 2001 | 28 | 19 |
| 2002 | 35 | 43 |
| 2003 | 38 | 44 |
| 2004 | 33 | 64 |
| 2005 | 42 | 96 |
| 2006 | 50 | 155 |
| 2007 | 65 | 146 |
| 2008 | 74 | 174 |
| 2009 | 112 | 194 |
| 2010 | 145 | 224 |
| 2011 | 175 | 302 |
| 2012 | 204 | 365 |
| 2013 | 315 | 487 |
| 2014 | 445 | 603 |
| 2015 | 566 | 573 |
| 2016 | 536 | 524 |
| 2017 | 529 | 582 |
| 2018 | 460 | 457 |
| 2019 | 479 | 512 |
| 2020 | 496 | 569 |
| 2021 | 377 | 496 |
| 2022 | 385 | 614 |
| 2023 | 357 | 657 |
| 2024 | 476 | 707 |
| 2025 | 474 | 619 |
| 2026 | 298 | 484 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Circuit for transporting charged particles6 Oct 2026US 12,757,425 B2Qdevil Aps
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Conductive bridge through dielectric wall between source or drain contacts6 Oct 2026US 12,757,439 B2Intel Corporation
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electric field readout of a solid-state sensor8 Oct 2026US 2026/0313995 A1Rtx Bbn Technologies, Inc.
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016