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US 2026/0313995 A1Published application
Electric field readout of a solid-state sensor
AssigneeRtx Bbn Technologies, Inc.
InventorsErik Eisenach, Martin Gustafsson, Moe D. Soltani
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Abstract
A sensor may include a substrate with quantum defects, where ionization of the quantum defects by a stimulus from an ionization source forms free electrons in the substrate, and where an ionizability of the quantum defects by the stimulus is sensitive to a measurand. The sensor may further include a transistor circuit with one or more transistors to generate a detection signal indicative of the measurand based on electric field readout of the free electrons in the substrate when the stimulus is incident on the substrate.
Claims20
A sensor comprising:
- a substrate including quantum defects, wherein ionization of the quantum defects by a stimulus from an ionization source forms free electrons in the substrate, wherein an ionizability of the quantum defects by the stimulus is sensitive to a measurand;
- and
- a transistor circuit including one or more transistors to generate a detection signal indicative of the measurand based on electric field readout of the free electrons in the substrate when the stimulus is incident on the substrate.
A sensor comprising:
- a substrate including quantum defects;
- an ionization source configured to generate a stimulus, wherein ionization of the quantum defects by a stimulus from an ionization source forms free electrons in the substrate, wherein an ionizability of the quantum defects by the stimulus is sensitive to a measurand;
- a transistor circuit including one or more transistors to generate a detection signal indicative of the measurand based on electric field readout of the free electrons in the substrate when the stimulus is incident on the substrate;
- and
- a controller configured to generate one or more measurements of the measurand based on the detection signal.
2 more elements
Dependencies are inferred from the claim text.