H10D 30/481
Fets having two-dimensional material channels
Official title: {FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs}
H10D30/481 (Fets having two-dimensional material channels) appears on 529 US grants and 802 published applications in this corpus.
Search patents in H10D- Granted patents
- 529
- Published applications
- 802
- Assignees
- 208
- Inventors
- 1,322
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 2 |
| 2005 | 0 | 2 |
| 2006 | 0 | 0 |
| 2007 | 2 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 7 |
| 2010 | 3 | 9 |
| 2011 | 4 | 23 |
| 2012 | 10 | 42 |
| 2013 | 28 | 42 |
| 2014 | 39 | 54 |
| 2015 | 55 | 38 |
| 2016 | 35 | 33 |
| 2017 | 36 | 38 |
| 2018 | 38 | 42 |
| 2019 | 51 | 34 |
| 2020 | 31 | 45 |
| 2021 | 30 | 46 |
| 2022 | 29 | 40 |
| 2023 | 28 | 92 |
| 2024 | 42 | 59 |
| 2025 | 43 | 78 |
| 2026 | 24 | 75 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Back-end-of-line 2D transistor8 Sep 2026US 12,733,197 B2Intel Corporation
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Semiconductor device having a two-dimensional channel and method for fabricating the same25 Aug 2026US 12,720,800 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device, method for fabricating the same and electronic system including the same18 Aug 2026US 12,713,639 B2Samsung Electronics Co., Ltd.
- Liquid metal printed 2D ultrahigh mobility conducting oxide transistors11 Aug 2026US 12,707,904 B2Trustees of Dartmouth College
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
- Integrated circuit device8 Oct 2026US 2026/0314048 A1Samsung Electronics Co., Ltd.
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Strain engineering in two-dimensional materials for high-performance transistors1 Oct 2026US 2026/0304819 A1Intel Corporation
- Device including two dimensional junction between van der waals material and electrode, and manufacturing method thereof1 Oct 2026US 2026/0304820 A1Postech Research and Business Development Foundation
Most cited
By later US patents
- Method for depositing a metal chalcogenide on a substrate by cyclical deposition421US 10,319,588 B2ASM IP Holding B. V. · 2019
- Field effect transistor and method of fabrication59US 6,825,506 B2Intel Corporation · 2004
- Self-aligned graphene transistor38US 8,106,383 B2International Business Machines Corporation · 2012
- Nanosheet field-effect transistors including a two-dimensional semiconducting material35US 10,388,732 B1Globalfoundries Inc. · 2019
- Method of forming a carbon-containing material29US 7,824,741 B2Micron Technology, Inc. · 2010