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US 8,106,383 B2Granted
Self-aligned graphene transistor
AssigneeInternational Business Machines Corporation
InventorsKeith A. Jenkins, Yu-Ming Lin, Alberto Valdes-Garcia
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Abstract
A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
Claims17
A graphene field effect transistor comprising:
- a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide;
- an insulating layer;
- and a graphene sheet displaced between the seed layer and the insulating layer, further comprising:
- a spacer formed on a top and both sides of the gate stack.
1 more element
A method of forming a graphene field effect transistor, the method comprising:
- providing an insulating layer;
- forming a graphene sheet on the insulating layer;
- forming a seed layer on the graphene sheet;
- forming a gate dielectric layer over the seed layer;
- forming a gate on top of the gate dielectric layer;
- encapsulating the seed layer, the gate dielectric and the gate in a spacer material to form an encapsulated gate stack;
- forming a source contact on the graphene sheet on a first side of the encapsulated gate stack;
- and
- forming a drain contact on the graphene sheet on a second side of the encapsulated gate stack.
6 more elements
Dependencies are inferred from the claim text.