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US 10,388,732 B1Granted
Nanosheet field-effect transistors including a two-dimensional semiconducting material
AssigneeGlobalfoundries Inc.
InventorsJulien Frougier, Ruilong Xie, Nicolas Loubet, Kangguo Cheng, Juntao Li
Life of this patent
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Abstract
Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A plurality of channel layers are arranged in a layer stack, and a source/drain region is connected with the plurality of channel layers. A gate structure includes a plurality of sections that respectively surround the plurality of channel layers. The plurality of channel layers contain a two-dimensional semiconducting material.
Claims20
A structure for a field-effect transistor, the structure comprising:
- a plurality of channel layers arranged in a layer stack;
- a source/drain region connected with the plurality of channel layers;
- and
- a gate structure including a plurality of sections that respectively surround the plurality of channel layers,
- wherein the plurality of channel layers are comprised of a two-dimensional semiconducting material, and the source/drain region is comprised of the two-dimensional semiconducting material.
2 more elements
A method of forming a field-effect transistor, the method comprising:
- forming a plurality of nanosheet channel layers arranged in a layer stack;
- forming a gate structure including a plurality of sections that respectively surround the plurality of nanosheet channel layers;
- after forming the gate structure, removing the plurality of nanosheet channel layers to form a plurality of spaces between the plurality of sections of the gate structure;
- and
- depositing a two-dimensional semiconducting material in the plurality of spaces between the plurality of sections of the gate structure to form a plurality of replacement channel layers.
2 more elements
Dependencies are inferred from the claim text.