Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices

Abstract

In some embodiments, a gate-all-around (GAA) transistor device includes channels comprising transition metal dichalcogenide materials. The channels are formed by converting metal or metal oxide material layers (which include, e.g., molybdenum or tungsten) of a material stack into the transition metal dichalcogenide material during a transistor fabrication process. The conversion may be performed by heating the metal/metal oxide material layers of the stack in the presence of a gas comprising, for example, sulfur, selenium, or tellurium, during the transistor fabrication process.

Dependencies are inferred from the claim text.