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US 2026/0304819 A1Published application
Strain engineering in two-dimensional materials for high-performance transistors
AssigneeIntel Corporation
InventorsMahmut Sami Kavrik, Kevin P. O'Brien, Uygar E. Avci, Chia-Ching Lin, Nazmul Arefin
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Abstract
Devices and systems with strained two-dimensional (2D) materials, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes source and drain contacts, a channel extending between the source and drain contacts, and a gate over the channel. The source and drain contacts include one or more stressed metals, and the channel includes a strained 2D material.
Claims20
A semiconductor device, comprising:
- a source contact and a drain contact, wherein the source contact and the drain contact comprise one or more metals, wherein the one or more metals are stressed;
- a channel extending between the source contact and the drain contact, wherein the channel comprises a two-dimensional (2D) material, wherein the 2D material is strained;
- and
- a gate over the channel.
1 more element
An electronic device, comprising:
- one or more transistors, wherein the respective transistors comprise:
- a source contact and a drain contact, wherein the source contact and the drain contact comprise a plurality of layers of stressed metal;
- a channel extending between the source contact and the drain contact, wherein the channel comprises a transition metal dichalcogenide (TMD), wherein the TMD is strained;
- and
- a gate over the channel.
2 more elements
A system, comprising:
- a circuit board;
- and
- an integrated circuit coupled to the circuit board, wherein the integrated circuit comprises a plurality of transistors, wherein the respective transistors comprise:
- a source contact and a drain contact, wherein the source contact and the drain contact comprise one or more layers of stressed metal;
- a channel extending between the source contact and the drain contact, wherein the channel comprises a transition metal dichalcogenide (TMD), wherein the TMD is strained;
- and
- a gate over the channel.
4 more elements
Dependencies are inferred from the claim text.