Back to results
US 10,319,588 B2Granted
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
AssigneeASM IP Holding B.V.
InventorsMiika Mattinen, Mikko Ritala, Markku Leskelä
Life of this patent
Estimating the term…
Abstract
A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.
Claims24
A method for depositing a metal chalcogenide on a substrate by cyclical deposition, the method comprising:
- contacting the substrate with at least one metal containing vapor phase reactant comprising, a partial chemical structure represented by the formula M-O—C, wherein a metal (M) atom is bonded to an oxygen (O) atom, and said oxygen (O) atom is bonded to a carbon (C) atom, and wherein M is selected from the group consisting of tin (Sn) and germanium (Ge);
- and
- contacting the substrate with at least one chalcogen containing vapor phase reactant.
Dependencies are inferred from the claim text.