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US 12,727,190 B2Granted
Semiconductor device including inclined channel layer and electronic device including the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsEunkyu Lee, Keunwook Shin, Minsu Seol
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Abstract
A semiconductor device may include a first electrode and a second electrode on a substrate and arranged perpendicular to a surface of the substrate, a plurality of channel layers between the first electrode and the second electrode, and a gate electrode surrounding the plurality of channel layers. The plurality of channel layers may be inclined with respect to a direction from the first electrode to the second electrode. An electronic device may include the semiconductor device.
Claims18
A semiconductor device comprising:
- a substrate;
- a first electrode and a second electrode on the substrate and arranged perpendicular to a surface of the substrate;
- a third electrode arranged perpendicular to the surface of the substrate;
- a plurality of channel layers between the first electrode and the second electrode, the plurality of channel layers being inclined at an angle with respect to a direction from the first electrode to the second electrode;
- and
- a gate electrode surrounding the plurality of channel layers, wherein
- the third electrode is between the first electrode and the second electrode,
- the plurality of channel layers comprise a plurality of first channel layers between the first electrode and the third electrode and a plurality of second channel layers between the second electrode and the third electrode,
- the plurality of first channel layers and the plurality of second channel layers are symmetrical with respect to the third electrode, and
- the gate electrode surrounds the plurality of first channel layers and the plurality of second channel layers.
7 more elements
A semiconductor device comprising:
- a substrate;
- a first electrode and a second electrode on the substrate and spaced apart from each other in a first direction, the first direction parallel to a bottom surface of the substrate, the first electrode and the second electrode extending in a second direction, the second direction being perpendicular to the bottom surface of the substrate;
- a third electrode arranged perpendicular to the substrate;
- a plurality of channel layers between the first electrode and the second electrode, the plurality of channel layers being inclined at an angle with respect to the bottom surface of the substrate;
- and
- a gate electrode surrounding the plurality of channel layers, wherein
- the third electrode is between the first electrode and the second electrode,
- the plurality of channel layers comprise a plurality of first channel layers between the first electrode and the third electrode and a plurality of second channel layers between the second electrode and the third electrode,
- the plurality of first channel layers and the plurality of second channel layers are symmetrical with respect to the third electrode, and
- the gate electrode surrounds the plurality of first channel layers and the plurality of second channel layers.
7 more elements
A semiconductor device comprising:
- a substrate;
- a first electrode and a second electrode on the substrate and spaced apart from each other in a first direction, the first direction parallel to a bottom surface of the substrate, the first electrode and the second electrode extending in a second direction, the second direction being perpendicular to the bottom surface of the substrate;
- a plurality of channel layers between the first electrode and the second electrode, the plurality of channel layers being inclined at an angle with respect to the bottom surface of the substrate;
- a gate electrode surrounding the plurality of channel layers;
- and
- a third electrode arranged perpendicular to a surface of the substrate, wherein
- the third electrode is between the first electrode and the second electrode,
- the plurality of channel layers includes a first group of channel layers spaced apart from each other in a vertical direction and a second group of channel layers spaced apart from each other in the vertical direction,
- opposite ends of channel layers in the first group of channel layers are connected to the first electrode and the third electrode, respectively,
- opposite ends of channel layers in the second group of channel layers are connected to the third electrode and the second electrode, respectively, and
- the gate electrode surrounds the first group of channel layers and the second group of channel layers.
8 more elements
Dependencies are inferred from the claim text.