H10D 30/485
Vertical fets having two-dimensional material channels
Official title: {Vertical FETs having two-dimensional material channels}
H10D30/485 (Vertical fets having two-dimensional material channels) appears on 27 US grants and 46 published applications in this corpus.
Search patents in H10D- Granted patents
- 27
- Published applications
- 46
- Assignees
- 26
- Inventors
- 112
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2014 | 0 | 2 |
| 2015 | 1 | 1 |
| 2016 | 2 | 0 |
| 2017 | 0 | 2 |
| 2018 | 0 | 1 |
| 2019 | 3 | 4 |
| 2020 | 1 | 5 |
| 2021 | 3 | 3 |
| 2022 | 3 | 2 |
| 2023 | 5 | 10 |
| 2024 | 5 | 3 |
| 2025 | 1 | 8 |
| 2026 | 3 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device, method for fabricating the same and electronic system including the same18 Aug 2026US 12,713,639 B2Samsung Electronics Co., Ltd.
- HEMT device with crystallinity control film31 Mar 2026US 12,593,490 B2Sumitomo Electric Device Innovations, Inc.
- Transition metal dichalcogenide (TMD) transistor structure3 Feb 2026US 12,543,358 B2International Business Machines Corporation
- Vertical field effect device and method of manufacturing10 Jun 2025US 12,328,895 B2Ideaded, S.L.
- Three dimensional vertically structured electronic devices17 Dec 2024US 12,170,330 B2Lawrence Livermore National Security, LLC
- Integrated circuit and method for manufacturing same24 Sep 2026US 2026/0293186 A1National Institute of Information and Communications Technology
- Semiconductor device and electronic apparatus including the semiconductor device11 Jun 2026US 2026/0164779 A1Samsung Electronics Co., Ltd.
- Vertical structure semiconductor device and method of manufacturing the same14 May 2026US 2026/0136582 A1Samsung Electronics Co., Ltd.
- Trench field-effect transistor (fet)14 May 2026US 2026/0136608 A1Semiconductor Components Industries, LLC
- Integrated Assemblies and Methods of Forming Integrated Assemblies23 Apr 2026US 2026/0113977 A1Micron Technology, Inc.
Most cited
By later US patents
- Tunneling field-effect transistor including graphene channel10US 9,105,556 B2Samsung Electronics Co., Ltd. · 2015
- Vertical gate-all-around transistor and manufacturing method thereof3US 10,475,744 B2United Microelectronics Corp. · 2019
- Vertical thin-film transistors between metal layers3US 11,417,770 B2Intel Corporation · 2022
- Impact ionization semiconductor device and manufacturing method thereof2US 10,510,903 B2National Chiao Tung University · 2019
- Memory cells based on thin-film transistors2US 11,393,927 B2Intel Corporation · 2022