Tunneling field-effect transistor including graphene channel

A tunneling field-effect transistor (TFET) comprising:

• a substrate;
• a first electrode on the substrate, the first electrode including a portion that is adjacent to a first area of the substrate;
• a semiconductor layer on the portion of the first electrode, the semiconductor layer including at least one of gallium indium zinc oxide (GIZO), a-Si, Si, HIZO, MoS2, CdSe, ZnO, AlP, InP, SrTiO3, Ge, GaAs, SiC, AlAs, GaN, CdTe, CuO, NiO, and GaMnAs;
• a graphene channel on the semiconductor layer, the semiconductor layer being between the graphene channel and the portion of the first electrode, the graphene channel extending beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate;
• a second electrode on the graphene channel, the second electrode being over the first area of the substrate;
• a gate insulating layer on the graphene channel;
• and
• a gate electrode on the gate insulating layer.

A tunneling field-effect transistor (TFET) comprising:

• a first electrode, the first electrode being a metal;
• a semiconductor layer directly on top of the first electrode;
• a graphene channel on the semiconductor layer,
• the graphene channel including a portion that extends away from at least one of the semiconductor layer and the first electrode;
• a second electrode on the portion of the graphene channel,
• the second electrode being spaced apart from the semiconductor layer and the first electrode;
• a gate electrode on the graphene channel;
• a gate insulating layer between the gate electrode and at least one of the first electrode, the graphene channel, and the second electrode.