Vertical structure semiconductor device and method of manufacturing the same

A vertical structure semiconductor device comprising:

• a first electrode layer including a transition metal element;
• a mask layer including a metal oxide, the mask layer on the first electrode layer, the mask layer exposing a portion of a surface of the first electrode layer through a plurality of channel growth regions in the mask layer;
• a plurality of channels each including a transition metal dichalcogenide, a first end of the plurality of channels being on the portion of the surface of the first electrode layer exposed by the plurality of channel growth regions;
• a first gate electrode on the mask layer and surrounding each of the plurality of channels;
• a gate insulating layer arranged on the mask layer, the gate insulating layer between the first gate electrode and the plurality of channels;
• and
• a second electrode layer contacting a second end of the plurality of channels, the second end of the plurality of channels being opposite the first end of the plurality of channels, wherein
• the transition metal dichalcogenide of the plurality of channels includes a transition metal element of the first electrode layer.