Transition metal dichalcogenide (TMD) transistor structure
AssigneeInternational Business Machines Corporation
InventorsLiqiao Qin, Heng Wu, Ruilong Xie, Tian Shen
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a semiconductor substrate, a lower metal contact disposed upon the semiconductor substrate, a gate structure disposed upon the lower metal contact, an upper metal contact disposed upon the gate structure, and a plurality of semiconductor carriers disposed in contact with both the lower metal contact and the upper metal contact, the plurality of semiconductor carriers disposed in channels passing through the gate structure.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- a lower metal contact disposed upon the semiconductor substrate;
- a gate structure disposed upon the lower metal contact, wherein the gate structure extends beyond an edge of the lower metal contact;
- an upper metal contact disposed upon the gate structure;
- and
- a first plurality of semiconductor carriers disposed in contact with both the lower metal contact and the upper metal contact, the plurality of semiconductor carriers disposed in channels passing through the gate structure.
A semiconductor device comprising:
- a semiconductor substrate;
- a lower metal contact disposed upon the semiconductor substrate;
- a gate structure disposed upon the lower metal contact, the gate structure comprising a first doped region and a second doped region, each of the first doped region and the second doped, region comprising different dopants, wherein the gate structure extends beyond an edge of the lower metal contact;
- an upper metal contact disposed upon the gate structure;
- and
- a first plurality of semiconductor carriers disposed in contact with both the lower metal contact and the upper metal contact, the plurality of semiconductor carriers disposed in channels passing through the first doped region of the gate structure.
A method of fabricating a semiconductor device, the method comprising:
- forming a lower metal contact upon a semiconductor substrate;
- forming a gate structure upon at least a portion of the lower metal contact;
- forming a plurality of vertical carriers in channels within the gate structure;
- forming a second plurality of vertical carriers in channels within the gate structure;
- and
- forming an upper metal contact adjacent to the gate structure and an upper end of the plurality of vertical carriers.
Dependencies are inferred from the claim text.