Trench field-effect transistor (fet)
AssigneeSemiconductor Components Industries, LLC
InventorsAnup BHALLA, Leonid FURSIN
Life of this patent
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Abstract
A trench field-effect transistor (FET) is disclosed. The trench FET includes a mesa having a source region and a channel region extending vertically under the source region. The trench FET further includes a gate material formed with a different material compared to the mesa and contacting the sides of the channel region. In addition, the trench FET includes a shield region formed under the gate material, and also includes a drain layer located beneath the channel region.
Claims20
A trench field-effect transistor (FET) comprising:
- a mesa including a source region and a channel region extending vertically under the source region;
- a gate material formed with a different material compared to the mesa and contacting sides of the channel region;
- a shield region formed under the gate material;
- and
- a drain layer located beneath the channel region.
A trench field-effect transistor (FET) comprising:
- a mesa including a source region and a channel region extending vertically under the source region;
- a sidewall layer located along sides of the mesa and including a same doping type as the source region and the channel region;
- a gate material contacting the sidewall layer, the gate material formed with a different material than the mesa and the sidewall layer;
- a shield region formed under the gate material;
- and
- a drain layer located beneath the channel region.
A trench field-effect transistor (FET) comprising:
- a mesa including a source region and a channel region extending vertically under the source region;
- a first sidewall layer located along sides of the mesa and including a higher doping concentration of a same doping type as the channel region;
- a second sidewall layer contacting the first sidewall layer and including an opposite doping type as the first sidewall layer;
- a gate material contacting the second sidewall layer, the gate material formed with a different material than the second sidewall layer;
- a shield region formed under the gate material;
- and
- a drain layer located beneath the channel region.
Dependencies are inferred from the claim text.