Vertical gate-all-around transistor and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsKuan-Hung Chen, Rung-Yuan Lee, Chun-Tsen Lu
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate, an isolation structure, an outer structure, and a gate structure. The isolation structure is disposed on the substrate. The outer structure surrounds a sidewall of the isolation structure. The gate structure surrounds a central part of the outer structure, so that the central part covered by the gate structure becomes a channel region, and the outer structure at both sides of the central part respectively becomes a source region and a drain region.
Claims14
A semiconductor device, comprising:
- an isolation structure, disposed on a substrate, wherein the isolation structure comprises:
- a main portion, blanketing the substrate;
- and
- a protrusion portion, protruding vertically from a top surface of the main portion, wherein the protrusion portion is an air gap and the main portion comprises a dielectric material;
- an outer structure, surrounding the protrusion portion of the isolation structure, wherein the outer structure is in direct contact with the protrusion portion and the outer structure is separated from the substrate by the main portion;
- wherein a material of the outer structure comprises a metal chalcogenide 2D material;
- and
- a gate structure, surrounding a central part of the outer structure, such that the central part covered by the gate structure becomes a channel region, and the outer structure at both sides of the central part respectively becomes a source region and a drain region.
A method of fabricating a semiconductor device, comprising:
- forming an isolation structure on a substrate, wherein the isolation structure comprises:
- a main portion, blanketing the substrate, wherein the main portion comprises a dielectric material;
- and
- a protrusion portion, protruding vertically from a top surface of the main portion;
- forming an outer structure on a sidewall of the protrusion portion of the isolation structure;
- wherein a material of the outer structure comprises a metal chalcogenide 2D material;
- forming a sacrificial layer on the substrate, the sacrificial layer surrounding a lower part the outer structure;
- forming a gate structure on the sacrificial layer, the gate structure surrounding a central part of the outer structure, such that the central part covered by the gate structure becomes a channel region, and the lower part and an upper part of the outer structure respectively become a source region and a drain region;
- removing the sacrificial layer;
- forming a dielectric layer on the substrate to cover the gate structure and the outer structure;
- patterning the dielectric layer to expose a top surface of the protrusion portion of the isolation structure;
- removing the protrusion portion of the isolation structure to form an air gap on the main portion;
- and
- sealing the air gap, wherein the outer structure is in direct contact with the air gap and the outer structure is separated from the substrate by the main portion.
Dependencies are inferred from the claim text.