Semiconductor device and electronic apparatus including the semiconductor device

An electronic apparatus comprising:

• a plurality of semiconductor devices, each of the plurality of semiconductor devices comprising
• a first transistor comprising a first channel layer, a first source electrode, and a first drain electrode, the first channel layer comprising a first transition metal dichalcogenide (TMD) material, the first source electrode and the first drain electrode being on the first channel layer, and
• a second transistor below the first transistor, the second transistor comprising a second channel layer, a second source electrode, and a second drain electrode, the second channel layer comprising a second TMD material, the second source electrode and the second drain electrode being on the second channel layer,
• wherein each of the first source electrode and the first drain electrode comprises a first topological metal comprising at least one element included in the first TMD material, and
• each of the second source electrode and the second drain electrode comprises a second topological metal comprising at least one element included in the second TMD material.