H10D 30/501
Fets having stacked nanowire, nanosheet or nanoribbon channels
Official title: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
H10D30/501 (Fets having stacked nanowire, nanosheet or nanoribbon channels) appears on 5,526 US grants and 9,636 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,526
- Published applications
- 9,636
- Assignees
- 305
- Inventors
- 5,356
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 4 |
| 2005 | 1 | 13 |
| 2006 | 8 | 10 |
| 2007 | 7 | 8 |
| 2008 | 8 | 22 |
| 2009 | 7 | 20 |
| 2010 | 17 | 19 |
| 2011 | 16 | 35 |
| 2012 | 28 | 28 |
| 2013 | 33 | 46 |
| 2014 | 40 | 70 |
| 2015 | 74 | 95 |
| 2016 | 128 | 145 |
| 2017 | 190 | 231 |
| 2018 | 213 | 240 |
| 2019 | 286 | 306 |
| 2020 | 319 | 501 |
| 2021 | 421 | 712 |
| 2022 | 560 | 1153 |
| 2023 | 620 | 1533 |
| 2024 | 816 | 1712 |
| 2025 | 1135 | 1636 |
| 2026 | 597 | 1097 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Charge pump circuit and charge pump device15 Sep 2026US 12,738,320 B2eMemory Technology Inc.
- Structure with self-aligned offset gate contact and direct backside contact8 Sep 2026US 12,733,240 B2International Business Machines Corporation
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Semiconductor quantum device8 Oct 2026US 2026/0313976 A1Teikyo University
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with conductive contact8 Oct 2026US 2026/0313986 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Aligned gate-all-around structure849US 9,412,828 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Uniformity tuning of variable-height features formed in trenches349US 10,332,963 B1Globalfoundries Inc. · 2019
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017