Semiconductor device structure with conductive contact
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChu-Yuan HSU, Jia-Chuan YOU, Chia-Hao CHANG, Kuo-Cheng CHIANG, I-Han HUANG
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an epitaxial structure and multiple semiconductor nanostructures beside the epitaxial structure. The semiconductor device structure also includes a dielectric layer over the semiconductor nanostructures and the epitaxial structure and a conductive contact penetrating through the dielectric layer and extending into the epitaxial structure. The semiconductor device structure further includes a protective layer between the dielectric layer and the conductive contact. The protective layer is separated from the epitaxial structure.
Claims20
A semiconductor device structure, comprising:
- an epitaxial structure;
- a plurality of semiconductor nanostructures beside the epitaxial structure;
- a dielectric layer over the semiconductor nanostructures and the epitaxial structure;
- a conductive contact penetrating through the dielectric layer and extending into the epitaxial structure;
- and
- a protective layer between the dielectric layer and the conductive contact, wherein the protective layer is separated from the epitaxial structure.
A semiconductor device structure, comprising:
- an epitaxial structure;
- a plurality of semiconductor nanostructures beside epitaxial structure;
- a dielectric layer over the epitaxial structure;
- a conductive contact penetrating through the dielectric layer and extending into the epitaxial structure;
- a protective layer between the dielectric layer and the conductive contact, wherein the protective layer laterally surrounds an upper portion of the conductive contact;
- and
- a metal-semiconductor compound element laterally surrounds a lower portion of the conductive contact, wherein the metal-semiconductor compound element is spaced apart from the protective layer.
A semiconductor device structure, comprising:
- an epitaxial structure;
- a channel structure beside epitaxial structure;
- a dielectric layer over the epitaxial structure;
- a conductive contact having an upper portion and a lower portion, wherein the epitaxial structure laterally surrounds the lower portion of the conductive contact;
- and
- a protective layer between the dielectric layer and the conductive contact, wherein the protective layer laterally surrounds the upper portion of the conductive contact, and the protective layer is spaced apart from the epitaxial structure.
Dependencies are inferred from the claim text.