H10D 30/507
Characterised by inner spacers between adjacent channels
Official title: {characterised by inner spacers between adjacent channels}
H10D30/507 (Characterised by inner spacers between adjacent channels) appears on 772 US grants and 1,422 published applications in this corpus.
Search patents in H10D- Granted patents
- 772
- Published applications
- 1,422
- Assignees
- 52
- Inventors
- 1,486
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 0 | 1 |
| 2015 | 0 | 1 |
| 2016 | 4 | 2 |
| 2017 | 10 | 22 |
| 2018 | 23 | 35 |
| 2019 | 45 | 46 |
| 2020 | 43 | 73 |
| 2021 | 71 | 105 |
| 2022 | 73 | 169 |
| 2023 | 101 | 246 |
| 2024 | 122 | 227 |
| 2025 | 177 | 313 |
| 2026 | 101 | 178 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Lightly-doped channel extensions25 Aug 2026US 12,720,811 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor source/drain regions and methods of forming the same25 Aug 2026US 12,720,823 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
- Semiconductor device including additional gate insulation pattern1 Oct 2026US 2026/0304822 A1Samsung Electronics Co., Ltd.
- Multi-gate device and manufacturing method thereof17 Sep 2026US 2026/0282413 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Backside ns depopulation for forksheet transistors17 Sep 2026US 2026/0282486 A1International Business Machines Corporation
- Transistors and the methods of forming the same10 Sep 2026US 2026/0271321 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Spacers for nanowire-based integrated circuit device and method of fabricating same128US 10,475,902 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Buffer regions for blocking unwanted diffusion in nanosheet transistors76US 10,263,100 B1International Business Machines Corporation · 2019
- Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same63US 10,008,583 B1Samsung Electronics Co., Ltd. · 2018
- Inner spacer formation for nanosheet field-effect transistors with tall suspensions60US 10,014,390 B1Globalfoundries Inc. · 2018
- Self-aligned air gap spacer for nanosheet CMOS devices53US 9,954,058 B1International Business Machines Corporation · 2018