H10D 30/508
Characterised by the relative sizes, shapes or dispositions of the inner spacers
Official title: {characterised by the relative sizes, shapes or dispositions of the inner spacers}
H10D30/508 (Characterised by the relative sizes, shapes or dispositions of the inner spacers) appears on 294 US grants and 606 published applications in this corpus.
Search patents in H10D- Granted patents
- 294
- Published applications
- 606
- Assignees
- 31
- Inventors
- 903
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2017 | 4 | 11 |
| 2018 | 9 | 8 |
| 2019 | 12 | 15 |
| 2020 | 14 | 33 |
| 2021 | 29 | 40 |
| 2022 | 27 | 65 |
| 2023 | 42 | 92 |
| 2024 | 42 | 98 |
| 2025 | 78 | 142 |
| 2026 | 37 | 102 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Lightly-doped channel extensions25 Aug 2026US 12,720,811 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices having contact plugs11 Aug 2026US 12,707,670 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of fabricating the same4 Aug 2026US 12,701,748 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method for manufacturing the same4 Aug 2026US 12,701,769 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including additional gate insulation pattern1 Oct 2026US 2026/0304822 A1Samsung Electronics Co., Ltd.
- Multi-gate device and manufacturing method thereof17 Sep 2026US 2026/0282413 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors and the methods of forming the same10 Sep 2026US 2026/0271321 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Orthogonal inner spacer20 Aug 2026US 2026/0247652 A1International Business Machines Corporation
- Semiconductor device structure and method for forming the same13 Aug 2026US 2026/0239691 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Buffer regions for blocking unwanted diffusion in nanosheet transistors76US 10,263,100 B1International Business Machines Corporation · 2019
- Self-aligned air gap spacer for nanosheet CMOS devices53US 9,954,058 B1International Business Machines Corporation · 2018
- Integrating standard-gate and extended-gate nanosheet transistors on the same substrate43US 10,243,054 B1International Business Machines Corporation · 2019
- Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer29US 9,647,139 B2International Business Machines Corporation · 2017
- Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement25US 10,211,307 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019