Buffer regions for blocking unwanted diffusion in nanosheet transistors
AssigneeInternational Business Machines Corporation
InventorsZhenxing Bi, Kangguo Cheng, Juntao Li, Peng Xu
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Abstract
Embodiments of the invention are directed to a method of fabricating a semiconductor device. A non-limiting example of the method includes performing fabrication operations to form a nanosheet field effect transistor device. The fabrication operations include forming a sacrificial nanosheet and a channel nanosheet over a substrate, forming a diffusion barrier layer between the sacrificial nanosheet and the channel nanosheet, wherein a diffusion coefficient of the diffusion barrier layer is selected to substantially prevent a predetermined semiconductor material from diffusing through the diffusion barrier layer.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- performing fabrication operations to form a nanosheet field effect transistor device, wherein the fabrication operations include:
- forming a sacrificial nanosheet and a channel nanosheet over a substrate;
- and
- forming a diffusion barrier layer between the sacrificial nanosheet and the channel nanosheet;
- wherein a diffusion coefficient of the diffusion barrier layer is selected to substantially prevent a predetermined semiconductor material from diffusing through the diffusion barrier layer.
A method of fabricating a semiconductor device, the method comprising:
- performing fabrication operations to form a nanosheet field effect transistor device, wherein the fabrication operations include:
- forming a first diffusion barrier layer across from a major surface of a substrate;
- forming a first nanosheet stack on an opposite side of the first diffusion barrier layer from the major surface of the substrate, wherein the first nanosheet stack comprises alternating channel nanosheets, stack diffusion barrier layers, and sacrificial nano sheets;
- and
- forming the first nanosheet stack such that the stack diffusion barrier layers are positioned between the sacrificial nano sheets and the channel nanosheets;
- wherein a diffusion coefficient of the stack diffusion barrier layer is selected to substantially prevent a predetermined semiconductor material from diffusing through the stack diffusion barrier layer.
A nanosheet field effect transistor device comprising:
- a substrate;
- a first channel nanosheet formed over the substrate;
- a second channel nanosheet formed over the first channel nanosheet;
- a multi-segmented inner spacer formed between the first channel nanosheet and the second channel nanosheet;
- a source region communicatively coupled to the first channel nanosheet and the second channel nanosheet;
- a drain region communicatively coupled to the first channel nanosheet and the second channel nanosheet;
- and
- a gate region communicatively coupled to the first channel nanosheet and the second channel nanosheet;
- wherein the multi-segmented inner spacer comprises a main body and a diffusion barrier region;
- wherein a diffusion coefficient of the diffusion barrier region is selected to substantially prevent a predetermined semiconductor material from diffusing through the diffusion barrier region.
Dependencies are inferred from the claim text.