Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer
AssigneeInternational Business Machines Corporation
InventorsBruce B. Doris, Michael A. Guillorn, Isaac Lauer, Xin Miao
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Abstract
A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.
Claims14
A method of forming a semiconductor device comprising:
- forming a gate structure on a stack of at least two semiconductor materials, wherein a spacer is present on sidewalls of the gate structure;
- etching exposed portions of the stack of at least two semiconductor materials with an etch process, wherein the etch process includes a stage that removes one of the at least two semiconductor materials at a faster rate than a second of the at least two semiconductor materials to provide a divot region undercutting the spacer;
- forming an atomic layer deposited (ALD) conformal dielectric layer that fills the divot region;
- and
- forming epitaxial semiconductor material on remaining semiconductor material from said stack of at least two semiconductor materials.
A semiconductor device comprising:
- a gate structure present on at least two suspended channel structures;
- a composite spacer present on sidewalls of the gate structure, the composite spacer comprising a cladding spacer present along a cap portion of the gate structure;
- and
- an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of said at least two suspended channel structures, the inner spacer comprising a crescent shape with a substantially central seam.
Dependencies are inferred from the claim text.