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US 2026/0304810 A1Published application
Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices
AssigneeASM IP Holding B.V.
InventorsDaniel Casey, Brendan Timothy Padraig Marozas
Life of this patent
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Abstract
Disclosed are methods and systems for silicon nanosheet etchback to reduce source/drain and silicon nanosheet interface resistance using epitaxial deposition methods in the same reaction chamber under the same process conditions. The etchback may be a Cl2 thermal etchback.
Claims21
A method of reducing interface resistance between silicon nanosheet layers and doped source/drain regions of a substrate, the method comprising:
- providing the substrate within a reaction chamber, the substrate comprising stacks including silicon nanosheet layers and SiGe layers;
- performing an etching process in the reaction chamber on at least a portion of a silicon nanosheet layer to form a silicon nanosheet recess in the silicon nanosheet layer;
- performing a first vapor deposition process in the reaction chamber to selectively deposit a material with a first doping into the formed silicon nanosheet recess;
- and
- performing a second vapor deposition process in the reaction chamber to selectively deposit a material with a second doping to fill a source/drain region of the substrate, the second doped material in contact with the first doped material.
2 more elements
A device made by performing the steps of:
- providing a substrate within a reaction chamber, the substrate comprising stacks including silicon nanosheet layers and SiGe layers;
- performing an etching process in the reaction chamber on at least a portion of a silicon nanosheet layer to form a silicon nanosheet recess in the silicon nanosheet layer;
- performing a first vapor deposition process in the reaction chamber to selectively deposit a highly doped material into the formed silicon nanosheet recess;
- and
- performing a second vapor deposition process in the reaction chamber to selectively deposit a doped material to fill a source/drain region of the substrate, the doped material in contact with the highly doped material.
2 more elements
A reaction chamber adapted to perform the steps of:
- providing the substrate within a reaction chamber, the substrate comprising stacks including silicon nanosheet layers and SiGe layers;
- performing an etching process in the reaction chamber on at least a portion of a silicon nanosheet layer to form a silicon nanosheet recess in the silicon nanosheet layer;
- performing a first vapor deposition process in the reaction chamber to selectively deposit a material with a first doping into the formed silicon nanosheet recess;
- and
- performing a second vapor deposition process in the reaction chamber to selectively deposit a material with a second doping to fill a source/drain region of the substrate, the doped material in contact with the highly doped material.
2 more elements
Dependencies are inferred from the claim text.