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US 2026/0282486 A1Published application
Backside ns depopulation for forksheet transistors
AssigneeInternational Business Machines Corporation
InventorsXiaoli He, Lijuan Zou, Ruilong Xie, Tao Li, Jingyun Zhang
Life of this patent
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Abstract
A microelectronic structure that includes a forksheet nanosheet transistor that includes a source/drain a backside contact located on the backside surface of the source/drain and a backside spacer plug located on a first side of the backside contact.
Claims20
A microelectronic structure comprising:
- a forksheet nanosheet transistor that includes a source/drain;
- a backside contact located on the backside surface of the source/drain;
- and
- a backside spacer plug located on a first side of the backside contact.
1 more element
A microelectronic structure comprising:
- a forksheet nanosheet transistor that includes a source/drain, a plurality of first channel layers and a plurality of second channel layers;
- a dielectric pillar located between the plurality of first channel layers and the plurality of second channel layers;
- a backside contact located on the backside surface of the source/drain;
- and
- a backside spacer plug located on a first side of the dielectric pillar.
2 more elements
A microelectronic structure comprising:
- a forksheet nanosheet transistor that includes a source/drain, a plurality of first channel layers and a plurality of second channel layers;
- a dielectric pillar located between the plurality of first channel layers and the plurality of second channel layers;
- a backside contact located on the backside surface of the source/drain;
- a backside spacer plug located on a first side of the backside contact;
- and
- a second backside spacer plug located on a first side of the dielectric pillar.
3 more elements
Dependencies are inferred from the claim text.