H10D 30/509
Characterised by the material of the inner spacers
Official title: {characterised by the material of the inner spacers}
H10D30/509 (Characterised by the material of the inner spacers) appears on 109 US grants and 202 published applications in this corpus.
Search patents in H10D- Granted patents
- 109
- Published applications
- 202
- Assignees
- 19
- Inventors
- 396
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 2 | 2 |
| 2018 | 5 | 5 |
| 2019 | 7 | 7 |
| 2020 | 8 | 10 |
| 2021 | 8 | 19 |
| 2022 | 14 | 24 |
| 2023 | 17 | 28 |
| 2024 | 13 | 24 |
| 2025 | 21 | 44 |
| 2026 | 12 | 35 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Stacked device structures and methods for forming the same11 Aug 2026US 12,707,713 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for manufacturing the same4 Aug 2026US 12,701,769 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inner spacer liner for gate-all-around device21 Jul 2026US 12,690,222 B2APPLIED Materials.Inc.
- High-density low-k dielectric layer2 Jul 2026US 2026/0190370 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and fabrication method thereof2 Jul 2026US 2026/0190378 A1Semiconductor Manufacturing International (Shanghai) Corporation
- Semiconductor device including seed layer and method for manufacturing the same2 Jul 2026US 2026/0190402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Oxidation-based selective cavity spacers for nanowire field effect transistors2 Jul 2026US 2026/0190435 A1Intel Corporation
- Selective nanowire release and backfill for transistor channel stress engineering in nanowire field effect transistors2 Jul 2026US 2026/0190446 A1Intel Corporation
Most cited
By later US patents
- Self-aligned air gap spacer for nanosheet CMOS devices53US 9,954,058 B1International Business Machines Corporation · 2018
- Forming a hybrid channel nanosheet semiconductor structure38US 9,704,863 B1International Business Machines Corporation · 2017
- Inner spacers for gate-all-around semiconductor devices21US 10,950,731 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2021
- Variable gate width for gate all-around transistors16US 9,590,089 B2Intel Corporation · 2017
- Self-aligned air gap spacer for nanosheet CMOS devices14US 10,243,043 B2International Business Machines Corporation · 2019