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US 12,707,713 B2Granted
Stacked device structures and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Liang Cheng, Ying-Hsun Chen
Life of this patent
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Abstract
A complementary metal oxide semiconductor (CMOS) device includes a transistor of a first type formed over a first substrate, and a transistor of a second type formed over a second substrate. The CMOS device is formed when the transistor of the first type formed on the first substrate is bonded to the transistor of the second type formed over the second substrate.
Claims20
A semiconductor device, comprising:
- a first transistor including a plurality of gate stacks and a metal contact between the plurality of gate stacks;
- and
- a second transistor bonded to the first transistor and electrically coupled to the first transistor by the metal contact, wherein the metal contact is between the plurality of gate stacks and the second transistor, wherein the second transistor comprises:
- an interlayer dielectric (ILD) layer bonded to a dielectric layer of the first transistor;
- and
- a back end of the line (BEOL) metal contact in the ILD layer bonded to the metal contact of the first transistor,
- wherein an upper surface of the ILD layer is coplanar with an upper surface of the BEOL metal contact, and a hybrid bond interface between the first transistor and the second transistor is located at the upper surface of the ILD layer and the upper surface of the BEOL metal contact.
4 more elements
A semiconductor device, comprising:
- a fin-shaped field effect transistor (FinFET);
- and
- a gate-all-around field effect transistor (GAAFET) bonded to the FinFET, comprising:
- a plurality of gate stacks;
- and
- a metal contact between the plurality of gate stacks and the FinFET and configured to electrically couple the GAAFET to the FinFET, wherein the GAAFET further comprises a semiconductor layer comprising an active region between the plurality of gate stacks, the metal contact contacts the active region of the semiconductor layer between the plurality of gate stacks, and the metal contact of the GAAFET comprises:
- an inner portion contacting the active region of the GAAFET and having a first thickness;
- and
- an outer portion contacting the plurality of gate stacks and having a second thickness less than the first thickness.
6 more elements
A method of forming a semiconductor device, the method comprising:
- providing a first transistor including a plurality of gate stacks and a metal contact between the plurality of gate stacks;
- providing a second transistor;
- and
- bonding the first transistor to the second transistor such that the metal contact is between the plurality of gate stacks and the second transistor and electrically couples the first transistor to the second transistor, wherein the first transistor further comprises a dielectric layer and the metal contact is in the dielectric layer, the second transistor comprises an interlayer dielectric (ILD) layer and a back end of the line (BEOL) metal contact in the ILD layer, the bonding of the first transistor to the second transistor comprises bonding the dielectric layer of the first transistor to the ILD layer of the second transistor and bonding the metal contact of the first transistor to the BEOL metal contact of the second transistor, and an upper surface of the ILD layer is coplanar with an upper surface of the BEOL metal contact, and a hybrid bond interface between the first transistor and the second transistor is located at the upper surface of the ILD layer and the upper surface of the BEOL metal contact.
1 more element
Dependencies are inferred from the claim text.