Oxidation-based selective cavity spacers for nanowire field effect transistors
AssigneeIntel Corporation
InventorsRishabh Mehandru, Sudipto Naskar, Michael L. Hattendorf, Patrick H. Keys, Stephen M. Cea
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Abstract
Devices, transistor structures, systems, and techniques are described herein related to gate all around field effect transistors having a stack of nanowires (i.e., semiconductor structures) contacted by epitaxial source and drain structures at opposite ends of the nanowires. The transistors include a gate structure vertically between the nanowires. Spacer structures of silicon germanium oxide separate the ends of the nanowires spacer and separate the source and drains structures from the gate structure.
Claims20
An apparatus, comprising:
- a stack of semiconductor structures each comprising silicon;
- a source structure epitaxial to a first end of each of the semiconductor structures and a drain structure epitaxial to a second end, laterally opposite the first end, of each of the semiconductor structures;
- a gate structure vertically between each of the semiconductor structures;
- and
- a spacer structure laterally between the gate structure and one of the source structure or the drain structure, the spacer structure comprising a compound of silicon, germanium, and oxygen.
An apparatus, comprising:
- a stack of semiconductor structures each comprising silicon;
- a source structure epitaxial to a first end of each of the semiconductor structures and a drain structure epitaxial to a second end, opposite the first end, of each of the semiconductor structures;
- a first spacer structure adjacent to the first ends of the semiconductor structures and a second spacer structure each to the second ends of the semiconductor structures, the first spacer structure and the second spacer structure each comprising silicon, germanium, and not less than 10% oxygen;
- and
- a gate structure vertically between the semiconductor structures and laterally between the first spacer structure and the second spacer structure.
A method, comprising:
- receiving a multilayer stack comprising a stack of semiconductor structures interleaved with a stack of sacrificial structures, the semiconductor structures each comprising silicon and the sacrificial structures each comprising silicon and germanium;
- epitaxially growing a source structure and a drain structure from opposing first and second ends of the multilayer stack;
- removing portions the sacrificial structures to form lateral material structures adjacent the first and second ends of the multilayer stack;
- oxidizing the lateral material structures to form spacer structures comprising a compound of silicon, germanium, and oxygen;
- and
- forming a gate structure vertically between the stack of semiconductor structures and laterally adjacent the spacer structures.
Dependencies are inferred from the claim text.