Uniformity tuning of variable-height features formed in trenches
AssigneeGlobalfoundries Inc.
InventorRuilong Xie
Life of this patent
Estimating the term…
Abstract
Methods of forming a structure for a field-effect transistor and related structures. A trench is formed in one or more semiconductor layers, and forming first and second sacrificial sidewall spacers are formed on an upper portion of the trench. A material is formed in the trench that is arranged in part between the first sacrificial sidewall spacer and the second sacrificial space. After forming the material in the trench, the first and second sacrificial sidewall spacers are removed. After removing the first and second sacrificial sidewall spacers, an upper portion of the material is removed with an isotropic etching process.
Claims19
A method comprising:
- forming a trench in one or more semiconductor layers;
- forming a first sacrificial sidewall spacer and a second sacrificial sidewall spacer on an upper portion of the trench;
- forming a material in the trench that is arranged in part between the first sacrificial sidewall spacer and the second sacrificial sidewall spacer;
- after forming the material in the trench, removing the first sacrificial sidewall spacer and the second sacrificial sidewall spacer;
- and
- after removing the first sacrificial sidewall spacer and the second sacrificial sidewall spacer, removing an upper portion of the material with an isotropic etching process.
Dependencies are inferred from the claim text.