H10D 30/502
Characterised by the stacked channels
Official title: {characterised by the stacked channels}
H10D30/502 (Characterised by the stacked channels) appears on 972 US grants and 1,983 published applications in this corpus.
Search patents in H10D- Granted patents
- 972
- Published applications
- 1,983
- Assignees
- 128
- Inventors
- 2,404
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 0 |
| 2005 | 0 | 6 |
| 2006 | 3 | 3 |
| 2007 | 4 | 4 |
| 2008 | 3 | 10 |
| 2009 | 2 | 8 |
| 2010 | 6 | 6 |
| 2011 | 7 | 18 |
| 2012 | 11 | 13 |
| 2013 | 17 | 10 |
| 2014 | 11 | 17 |
| 2015 | 18 | 22 |
| 2016 | 33 | 36 |
| 2017 | 40 | 60 |
| 2018 | 49 | 39 |
| 2019 | 53 | 47 |
| 2020 | 48 | 95 |
| 2021 | 76 | 128 |
| 2022 | 104 | 187 |
| 2023 | 95 | 218 |
| 2024 | 136 | 277 |
| 2025 | 177 | 322 |
| 2026 | 78 | 457 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Charge pump circuit and charge pump device15 Sep 2026US 12,738,320 B2eMemory Technology Inc.
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Semiconductor quantum device8 Oct 2026US 2026/0313976 A1Teikyo University
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical thin film transistors with surround gates188US 9,673,257 B1SanDisk Technologies LLC · 2017
- Strained nanowire CMOS device and method of forming157US 9,853,101 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Horizontal gate-all-around device having wrapped-around source and drain137US 10,109,721 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Multi-gate device and method of fabrication thereof136US 10,157,799 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Silicon and silicon germanium nanowire structures133US 8,753,942 B2Intel Corporation · 2014