H10D 30/503
Having non-rectangular cross-sections
Official title: {having non-rectangular cross-sections}
H10D30/503 (Having non-rectangular cross-sections) appears on 282 US grants and 544 published applications in this corpus.
Search patents in H10D- Granted patents
- 282
- Published applications
- 544
- Assignees
- 57
- Inventors
- 916
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 2 |
| 2010 | 3 | 4 |
| 2011 | 2 | 8 |
| 2012 | 6 | 7 |
| 2013 | 12 | 3 |
| 2014 | 3 | 4 |
| 2015 | 6 | 7 |
| 2016 | 9 | 14 |
| 2017 | 11 | 15 |
| 2018 | 15 | 11 |
| 2019 | 11 | 14 |
| 2020 | 16 | 36 |
| 2021 | 27 | 38 |
| 2022 | 32 | 49 |
| 2023 | 27 | 48 |
| 2024 | 40 | 62 |
| 2025 | 45 | 125 |
| 2026 | 16 | 93 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Charge pump circuit and charge pump device15 Sep 2026US 12,738,320 B2eMemory Technology Inc.
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Source or drain metallization prior to contact formation in stacked transistors25 Aug 2026US 12,720,819 B2Intel Corporation
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device8 Oct 2026US 2026/0314048 A1Samsung Electronics Co., Ltd.
- Semiconductor device including cutting pattern8 Oct 2026US 2026/0314057 A1Samsung Electronics Co., Ltd.
- Integrated circuit structures having both spine-fet and gaa architectures1 Oct 2026US 2026/0304728 A1Intel Corporation
- Integrated circuit structures having dummy links for uniform grid metal gate and trench contact cut1 Oct 2026US 2026/0304928 A1Intel Corporation
Most cited
By later US patents
- Strained nanowire CMOS device and method of forming157US 9,853,101 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Horizontal gate-all-around device having wrapped-around source and drain137US 10,109,721 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Silicon and silicon germanium nanowire structures133US 8,753,942 B2Intel Corporation · 2014
- Silicon and silicon germanium nanowire structures59US 9,129,829 B2Intel Corporation · 2015
- Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same45US 7,642,578 B2Samsung Electronics Co., Ltd. · 2010