Source or drain metallization prior to contact formation in stacked transistors

An electronic device, comprising:

• a chip package comprising a die, the die comprising
• a first semiconductor device having one or more first semiconductor nanoribbons extending in a first direction between a first source or drain region and a second source or drain region;
• a second semiconductor device having one or more second semiconductor nanoribbons extending in the first direction between a third source or drain region and a fourth source or drain region, wherein the one or more second semiconductor nanoribbons are spaced vertically from the one or more first semiconductor nanoribbons in a second direction different from the first direction, and the third source or drain region is spaced vertically from the first source or drain region in the second direction;
• an insulator layer between the first source or drain region and the third source or drain region;
• a conductive fill comprising a metal and contacting at least a portion of the first source or drain region and at least a portion of the insulator layer, wherein the conductive fill directly contacts a bottommost surface of the first source or drain region;
• and
• a conductive contact that extends through a thickness of the third source or drain region and contacts a portion of the conductive fill.

An integrated circuit, comprising:

• a first semiconductor device having one or more first semiconductor nanoribbons extending in a first direction between a first source or drain region and a second source or drain region;
• a second semiconductor device having one or more second semiconductor nanoribbons extending in the first direction between a third source or drain region and a fourth source or drain region, wherein the one or more second semiconductor nanoribbons are spaced vertically from the one or more first semiconductor nanoribbons in a second direction different from the first direction, and the third source or drain region is spaced vertically from the first source or drain region in the second direction;
• an insulator layer between the first source or drain region and the third source or drain region;
• a conductive fill comprising a metal and contacting at least a portion of the first source or drain region and at least a portion of the insulator layer, wherein the conductive fill directly contacts a bottommost surface of the first source or drain region;
• and
• a conductive contact that extends through a thickness of the third source or drain region and contacts a portion of the conductive fill.