Strained nanowire CMOS device and method of forming
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
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Abstract
Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a first fin and a second fin, each of the first fin and the second fin comprising an alternating epitaxial structure, the alternating epitaxial structure having a plurality of epitaxial layers, the plurality of epitaxial layers comprising first epitaxial layers and second epitaxial layers, the first epitaxial layers comprising a first semiconductor material, the second epitaxial layers comprising a second semiconductor material, layers of the alternating epitaxial structure alternating between one of the first epitaxial layers and one of the second epitaxial layers;
- forming a first dielectric layer over the first fin and the second fin;
- exposing a channel region of the second fin;
- removing at least a portion of the first epitaxial layers in the channel region of the second fin;
- forming a first gate stack over the first fin, the first gate stack extending along sidewalls of the first epitaxial layers and the second epitaxial layers of the first fin;
- and
- forming a second gate stack over the second fin, the second gate stack extending along sidewalls of the second epitaxial layers.
A method of forming a semiconductor device, the method comprising:
- forming a first fin and a second fin, each of the first fin and the second fin comprising an alternating epitaxial structure, the alternating epitaxial structure having a plurality of epitaxial layers, the plurality of epitaxial layers comprising first epitaxial layers and second epitaxial layers, the first epitaxial layers comprising a first semiconductor material, the second epitaxial layers comprising a second semiconductor material, layers of the alternating epitaxial structure alternating between one of the first epitaxial layers and one of the second epitaxial layers;
- selectively etching sidewalls of at least one of the first epitaxial layers in a first channel region of the first fin;
- selectively etching sidewalls of at least one of the second epitaxial layers in a second channel region of the second fin;
- forming a first gate stack over the first fin;
- and
- forming a second gate stack over the second fin.
A method of forming a semiconductor device, the method comprising:
- forming a first fin and a second fin, each of the first fin and the second fin comprising an alternating epitaxial structure, the alternating epitaxial structure having a plurality of epitaxial layers, the plurality of epitaxial layers comprising first epitaxial layers and second epitaxial layers, the first epitaxial layers comprising a first semiconductor material, the second epitaxial layers comprising a second semiconductor material, layers of the alternating epitaxial structure alternating between one of the first epitaxial layers and one of the second epitaxial layers;
- indenting sidewalls of the first epitaxial layers from sidewalls of the second epitaxial layers in a first channel region of the first fin;
- indenting sidewalls of the second epitaxial layers from sidewalls of the first epitaxial layer in a second channel region of the second fin;
- forming a first gate stack over the first fin;
- and
- forming a second gate stack over the second fin.
Dependencies are inferred from the claim text.