Integrated circuit structures having dummy links for uniform grid metal gate and trench contact cut

An integrated circuit structure, comprising:

• a fin;
• a gate electrode over the fin;
• a first conductive trench contact adjacent to a first side of the gate electrode;
• a second conductive trench contact adjacent to a second side of the gate electrode;
• a dielectric cut plug structure extending through the gate electrode and through the first and second conductive trench contacts, the dielectric cut plug structure having a recess laterally adjacent to first and second portions of the first conductive trench contact;
• a conductive link in the recess of the dielectric cut plug structure, the conductive link connecting the first and second portions of the first conductive trench contact;
• and
• a conductive structure in a recess of the second conductive trench contact.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical stack of horizontal nanowires or a fin;
• a gate electrode over the vertical stack of horizontal nanowires of the fin;
• a first conductive trench contact adjacent to a first side of the gate electrode;
• a second conductive trench contact adjacent to a second side of the gate electrode;
• a dielectric cut plug structure extending through the gate electrode and through the first and second conductive trench contacts, the dielectric cut plug structure having a recess laterally adjacent to first and second portions of the first conductive trench contact;
• a conductive link in the recess of the dielectric cut plug structure, the conductive link connecting the first and second portions of the first conductive trench contact;
• and
• a conductive structure in a recess of the second conductive trench contact.