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US 9,673,257 B1Granted
Vertical thin film transistors with surround gates
AssigneeSanDisk Technologies LLC
InventorsSeje Takaki, Manabu Hayashi, Akira Nakada, Ryousuke Itou, Takuro Maede, Kengo Kajiwara, Tetsuya Yamada
Life of this patent
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Abstract
A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge section disposed between the first rail gate and the second rail gate.
Claims20
A method comprising:
- forming a transistor by:
- forming a first a rail gate disposed in a first direction above a substrate;
- forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction;
- and
- forming a bridge section disposed between the first rail gate and the second rail gate.
2 more elements
An apparatus comprising:
- a monolithic three-dimensional memory array comprising a vertically-oriented bit line select transistor comprising a gate terminal comprising:
- a first a rail gate disposed in a first direction above a substrate;
- a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction;
- and
- a bridge section disposed between the first rail gate and the second rail gate.
2 more elements
A method comprising:
- forming a vertically-oriented bit line select transistor comprising a stack of semiconductor material above a substrate;
- forming a first a rail gate disposed on a first side of the stack of semiconductor material;
- forming a second rail gate disposed on a second side of the stack of semiconductor material, the second side substantially perpendicular to the first side;
- and
- forming a bridge section disposed between the first rail gate and the second rail gate.
2 more elements
Dependencies are inferred from the claim text.