H10D 30/504
Wherein the stacked channels have different properties
Official title: {wherein the stacked channels have different properties}
H10D30/504 (Wherein the stacked channels have different properties) appears on 463 US grants and 779 published applications in this corpus.
Search patents in H10D- Granted patents
- 463
- Published applications
- 779
- Assignees
- 66
- Inventors
- 1,249
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 6 |
| 2006 | 2 | 2 |
| 2007 | 4 | 4 |
| 2008 | 3 | 6 |
| 2009 | 2 | 5 |
| 2010 | 3 | 3 |
| 2011 | 3 | 8 |
| 2012 | 7 | 8 |
| 2013 | 8 | 6 |
| 2014 | 2 | 6 |
| 2015 | 10 | 9 |
| 2016 | 12 | 13 |
| 2017 | 18 | 22 |
| 2018 | 15 | 14 |
| 2019 | 17 | 19 |
| 2020 | 12 | 37 |
| 2021 | 32 | 59 |
| 2022 | 59 | 102 |
| 2023 | 45 | 108 |
| 2024 | 66 | 151 |
| 2025 | 94 | 121 |
| 2026 | 49 | 70 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device25 Aug 2026US 12,721,135 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,686 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same4 Aug 2026US 12,701,748 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including cutting pattern8 Oct 2026US 2026/0314057 A1Samsung Electronics Co., Ltd.
- Semiconductor device including internal spacer layers1 Oct 2026US 2026/0304932 A1Samsung Electronics Co., Ltd.
- Np ratio tuning techniques for nanoribbon-based transistor with double-height cell10 Sep 2026US 2026/0271383 A1
- Semiconductor device and manufacturing method thereof10 Sep 2026US 2026/0271391 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical thin film transistors with surround gates188US 9,673,257 B1SanDisk Technologies LLC · 2017
- Multi-gate device and method of fabrication thereof136US 10,157,799 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Method of fabricating field effect transistor (FET) having wire channels85US 7,374,986 B2Samsung Electronics Co., Ltd. · 2008
- Semiconductor device and method for manufacturing semiconductor device78US 8,748,886 B2Semiconductor Energy Laboratory Co.Ltd. · 2014
- Stacked nanowire field effect transistor57US 8,679,902 B1International Business Machines Corporation · 2014