Np ratio tuning techniques for nanoribbon-based transistor with double-height cell

An integrated circuit (IC) structure, comprising:

• a first nanoribbon of a semiconductor material over a substrate, wherein:
• the first nanoribbon has a first width and a first thickness,
• the first width is a first dimension of the first nanoribbon in a first plane substantially parallel with the substrate, and
• the first thickness is second dimension of the first nanoribbon in a second plane substantially orthogonal to the substrate;
• and
• a second nanoribbon of the semiconductor material over the substrate, wherein:
• the second nanoribbon is coplanar with and substantially parallel with the first nanoribbon, and extending along a same line as the first nanoribbon,
• the second nanoribbon has a second width and a second thickness,
• the second width is a third dimension of the second nanoribbon in the first plane,
• the second thickness is a fourth dimension of the second nanoribbon in a third plane substantially orthogonal to the substrate,
• the first width is greater than the second width, and
• the first thickness is smaller than the second thickness.

An integrated circuit (IC) structure, comprising:

• a first nanoribbon of a semiconductor material over a substrate, wherein the first nanoribbon has a first width;
• a first gate electrode material at least partially around the first nanoribbon;
• a first gate dielectric material with a first thickness between the first nanoribbon and the first gate electrode material;
• a second nanoribbon of the semiconductor material over the substrate, wherein:
• the second nanoribbon is coplanar with and substantially parallel with the first nanoribbon, and extending along a same line as the first nanoribbon,
• the second nanoribbon has a second width, and
• the first width is greater than the second width;
• a second gate electrode material at least partially around the second nanoribbon;
• and
• a second gate dielectric material with a second thickness between the second nanoribbon and the second gate electrode material, wherein the first thickness is greater than the second thickness.