H10D 30/506
Having different thicknesses, sizes or shapes
Official title: {having different thicknesses, sizes or shapes}
H10D30/506 (Having different thicknesses, sizes or shapes) appears on 354 US grants and 613 published applications in this corpus.
Search patents in H10D- Granted patents
- 354
- Published applications
- 613
- Assignees
- 45
- Inventors
- 1,030
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 3 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 2 | 2 |
| 2009 | 0 | 4 |
| 2010 | 0 | 3 |
| 2011 | 2 | 3 |
| 2012 | 4 | 5 |
| 2013 | 6 | 2 |
| 2014 | 1 | 3 |
| 2015 | 3 | 3 |
| 2016 | 5 | 3 |
| 2017 | 8 | 13 |
| 2018 | 7 | 10 |
| 2019 | 14 | 15 |
| 2020 | 8 | 28 |
| 2021 | 24 | 48 |
| 2022 | 48 | 87 |
| 2023 | 39 | 97 |
| 2024 | 54 | 129 |
| 2025 | 83 | 94 |
| 2026 | 45 | 60 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device25 Aug 2026US 12,721,135 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,686 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same4 Aug 2026US 12,701,748 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including cutting pattern8 Oct 2026US 2026/0314057 A1Samsung Electronics Co., Ltd.
- Semiconductor device including internal spacer layers1 Oct 2026US 2026/0304932 A1Samsung Electronics Co., Ltd.
- Np ratio tuning techniques for nanoribbon-based transistor with double-height cell10 Sep 2026US 2026/0271383 A1
- Semiconductor device20 Aug 2026US 2026/0247647 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of fabricating field effect transistor (FET) having wire channels85US 7,374,986 B2Samsung Electronics Co., Ltd. · 2008
- Stacked nanowire field effect transistor57US 8,679,902 B1International Business Machines Corporation · 2014
- Integrating standard-gate and extended-gate nanosheet transistors on the same substrate43US 10,243,054 B1International Business Machines Corporation · 2019
- Nanowire mesh FET with multiple threshold voltages39US 8,422,273 B2International Business Machines Corporation · 2013
- Nanosheet transistor with uniform effective gate length26US 10,297,664 B2Globalfoundries Inc. · 2019