Nanowire mesh FET with multiple threshold voltages
AssigneeInternational Business Machines Corporation
InventorsJosephine Chang, Paul Chang, Michael A. Guillorn, Jeffrey Sleight
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Abstract
Nanowire-based field-effect transistors (FETs) and techniques for the fabrication thereof are provided. In one aspect, a FET is provided having a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein one or more of the device layers are configured to have a different threshold voltage from one or more other of the device layers; and a gate common to each of the device layers surrounding the nanowire channels.
Claims9
A method of fabricating a FET, comprising the steps of:
- forming a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region;
- configuring one or more of the device layers to have a different threshold voltage from one or more other of the device layers;
- and
- forming a gate common to each of the device layers surrounding the nanowire channels.
Dependencies are inferred from the claim text.